Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit
نویسندگان
چکیده
In this paper, we present the main issues and the modelling approaches for the simulation of nanoscale MOSFETs in which transport is dominated by ballistic electrons. We show that is indeed possible to compute in an accurate way the density of states in the channel in the case of quantum confinement without solving the complete two-dimensional Schr€ odinger equation. We are developing modelling tools that can be applied to several types of MOSFET structures: bulk, strained-Si and ultra-thin SOI MOSFETs, FINFETs, double gate MOSFETs and Schottky barrier MOSFETs. Here, results for silicon germanium and bulk silicon devices with channel length of 25 nm are presented. In the present form, tools are limited to the case of fully ballistic transport, which might be reached by the extremely scaled MOSFETs at end of the Roadmap. 2003 Elsevier Ltd. All rights reserved.
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